Pseudospin and Deformation-Induced Gauge Field in Graphene
نویسندگان
چکیده
منابع مشابه
Pseudospin and Deformation-Induced Gauge Field in Graphene
The electronic properties of a single layer of graphite, graphene1)–4) have attracted much attention due to the “relativistic” character of π-electrons near the Fermi level. The energy band structure of graphene exhibits a linear energy dispersion relation around the two inequivalent, hexagonal corners of the first Brillouin zone in the k-space (the K and K′ points).5),6) The wavefunction (Hami...
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We propose a nonmagnetic, pseudospin-based version of a spin valve, in which the pseudospin polarization in neighboring regions of a graphene bilayer is controlled by external gates. Numerical calculations demonstrate a large on-off ratio of such a device. This finding holds promise for the realization of pseudospintronics: a form of electronics based upon the manipulation of pseudospin analogo...
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We show that the pseudospin, being an additional degree of freedom for carriers in graphene, can be efficiently controlled by means of the electron-electron interactions which, in turn, can be manipulated by changing the substrate. In particular, an out-of-plane pseudospin component can occur leading to a zero-field Hall current as well as to polarization-sensitive interband optical absorption.
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ژورنال
عنوان ژورنال: Progress of Theoretical Physics Supplement
سال: 2008
ISSN: 0375-9687
DOI: 10.1143/ptps.176.253